[nano501] NCN Seminar, Today, 2:00 pm
Goodman, Alicia D.
goodman at ecn.purdue.edu
Thu Jan 24 08:08:38 EST 2008
Silicon Spintronics
Ian Appelbaum, University of Delaware
Thursday, January 24, 2008, 2:00 pm , EE 317
Despite Silicon's intrinsic advantages for spintronics, even the basic
elements of spin transport had not been achieved in this semiconductor
until recently.[1] I will discuss the specific challenges associated
with spin injection and detection in Silicon (Si), and our unique
solution, employing ballistic hot-electron transport through nano-scale
ferromagnetic metal "polarizers". Using this technique, we have observed
unprecedented coherence in spin precession measurements, and extracted
very long spin lifetimes of conduction electrons traveling over
macroscopic distances.[2] Whereas transistor scaling limits will soon
suppress progress in microelectronics using Si, spintronics may secure
this semiconductor's dominance for the future.
[1] Ian Appelbaum, B.Q. Huang, and D.J. Monsma, "Electronic measurement
and control of spin transport in silicon," Nature 447, 295 (2007)
[2] B.Q. Huang, D.J. Monsma, and Ian Appelbaum, "Coherent spin
transport through a 350-micron-thick silicon wafer," Phys. Rev. Lett. 99,
Ian Appelbaum obtained his B.S. in Physics and Mathematics at Rensselaer
Polytechnic Institute (RPI), and Ph.D. in Physics at the Massachusetts
Institute of Technology (MIT). After spending one year as a postdoctoral
fellow at Harvard University's Division of Engineering and Applied
Sciences, he is currently an Assistant Professor of Electrical
Engineering at the University of Delaware.
--
Alicia Goodman
Administrative Assistant
Network for Computational Nanotechnology
Purdue University
Birck Nanotechnology Center
1205 West State Street
West Lafayette, IN 47907
Phone: 765-494-7715
Fax: 765-494-0811
email: goodman at purdue.edu
website: www.nanoHUB.org
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