[nano501] NCN Seminar, Today, 2:00 pm

Goodman, Alicia D. goodman at ecn.purdue.edu
Thu Jan 24 08:08:38 EST 2008


Silicon Spintronics
Ian Appelbaum, University of Delaware

Thursday,  January 24, 2008, 2:00 pm , EE 317

Despite Silicon's intrinsic advantages for spintronics, even the basic 
elements of spin transport had not been achieved in this semiconductor 
until recently.[1] I will discuss the specific challenges associated 
with spin injection and detection in Silicon (Si), and our unique 
solution, employing ballistic hot-electron transport through nano-scale 
ferromagnetic metal "polarizers". Using this technique, we have observed 
unprecedented coherence in spin precession measurements, and extracted 
very long spin lifetimes of conduction electrons traveling over 
macroscopic distances.[2] Whereas transistor scaling limits will soon 
suppress progress in microelectronics using Si, spintronics may secure 
this semiconductor's dominance for the future.

[1] Ian Appelbaum, B.Q. Huang, and D.J. Monsma, "Electronic measurement 
and control of spin transport in silicon," Nature 447, 295 (2007)
[2] B.Q. Huang, D.J. Monsma, and Ian Appelbaum, "Coherent spin
transport through a 350-micron-thick silicon wafer," Phys. Rev. Lett. 99,


Ian Appelbaum obtained his B.S. in Physics and Mathematics at Rensselaer 
Polytechnic Institute (RPI), and Ph.D. in Physics at the Massachusetts 
Institute of Technology (MIT). After spending one year as a postdoctoral 
fellow at Harvard University's Division of Engineering and Applied 
Sciences, he is currently an Assistant Professor of Electrical 
Engineering at the University of Delaware.

-- 

Alicia Goodman
Administrative Assistant
Network for Computational Nanotechnology
Purdue University
Birck Nanotechnology Center
1205 West State Street
West Lafayette, IN  47907
Phone:  765-494-7715
Fax:  765-494-0811
email:  goodman at purdue.edu
website:  www.nanoHUB.org

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